BA 885 E6327 Supplier,Distributor,Price,Datasheet,PDF

BA 885 E6327 distributor(DIODE RF SW 50V 50MA SOT-23),BA 885 E6327 short lead time

Part Number:   BA 885 E6327
Description:   DIODE RF SW 50V 50MA SOT-23
Category:   Discrete MOSFET
Manufacture:   Infineon Technologies
Package:   Discrete Semiconductor Products
Standard Package:   
   Send RFQ for BA 885 E6327 
1 pcs
Mininum order quantity from 1PCS BA 885 E6327
Mininum order value from 1USD
2 days
lead time of BA 885 E6327 is from 2 to 5 days
12 hours
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60 days
60 days full quality warranty of BA 885 E6327
 
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
device and its external resistor bias network.BA 885 E6327 Infineon Technologies DIODE RF SW 50V 50MA SOT-23 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device.BA 885 E6327 Infineon Technologies DIODE RF SW 50V 50MA SOT-23  The use of a BRTcan reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.BA 885 E6327 Infineon Technologies DIODE RF SW 50V 50MA SOT-23

Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count
• The SC−75/SOT−416 package can be soldered using wave or reflow.BA 885 E6327 Infineon Technologies DIODE RF SW 50V 50MA SOT-23
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.BA 885 E6327 Infineon Technologies DIODE RF SW 50V 50MA SOT-23
• Pb−Free Packages are Available