1 pcs
Mininum order quantity from 1PCS BCX 56-10 E6327
Mininum order value from 1USD
2 days
lead time of BCX 56-10 E6327 is from 2 to 5 days
12 hours
Fast quotation of BCX 56-10 E6327 within 12 hours
60 days
60 days full quality warranty of BCX 56-10 E6327
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BCX 56-10 E6327 Infineon Technologies TRANSISTOR NPN AF 80V SOT-89
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BCX 56-10 E6327 Infineon Technologies TRANSISTOR NPN AF 80V SOT-89
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BCX 56-10 E6327 Infineon Technologies TRANSISTOR NPN AF 80V SOT-89
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBCX 56-10 E6327 Infineon Technologies TRANSISTOR NPN AF 80V SOT-89