1 pcs
Mininum order quantity from 1PCS MRFE6S9045GNR1
Mininum order value from 1USD
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF MRFE6S9045GNR1 Freescale Semiconductor MOSFET RF N-CH 45W TO-270-2
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.MRFE6S9045GNR1 Freescale Semiconductor MOSFET RF N-CH 45W TO-270-2
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 MRFE6S9045GNR1 Freescale Semiconductor MOSFET RF N-CH 45W TO-270-2
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFMRFE6S9045GNR1 Freescale Semiconductor MOSFET RF N-CH 45W TO-270-2