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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF BSP170PE6327T Infineon Technologies (VA) MOSFET P-CH 60V 1.9A SOT223
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.BSP170PE6327T Infineon Technologies (VA) MOSFET P-CH 60V 1.9A SOT223
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 BSP170PE6327T Infineon Technologies (VA) MOSFET P-CH 60V 1.9A SOT223
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFBSP170PE6327T Infineon Technologies (VA) MOSFET P-CH 60V 1.9A SOT223