1 pcs
Mininum order quantity from 1PCS STGB3NB60KDT4
Mininum order value from 1USD
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60 days
60 days full quality warranty of STGB3NB60KDT4
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF STGB3NB60KDT4 STMicroelectronics MOSFET N-CHAN 6A 600V D2PAK
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.STGB3NB60KDT4 STMicroelectronics MOSFET N-CHAN 6A 600V D2PAK
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 STGB3NB60KDT4 STMicroelectronics MOSFET N-CHAN 6A 600V D2PAK
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFSTGB3NB60KDT4 STMicroelectronics MOSFET N-CHAN 6A 600V D2PAK