1 pcs
Mininum order quantity from 1PCS PTFA181001E V4 R250
Mininum order value from 1USD
2 days
lead time of PTFA181001E V4 R250 is from 2 to 5 days
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Fast quotation of PTFA181001E V4 R250 within 12 hours
60 days
60 days full quality warranty of PTFA181001E V4 R250
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device.PTFA181001E V4 R250 Infineon Technologies IC FET RF LDMOS 100W H-36248-2 P: We recommend that the worst case power dissipation be no greater than 50% of the absolute maximum rating of power dissipation. Carry out adequate heat design.PTFA181001E V4 R250 Infineon Technologies IC FET RF LDMOS 100W H-36248-2 PRSM: We recommend that a device be used within the recommended area in the figure, PRSM-tw. Tj: Derate this rating when using a device in order to ensure high reliability. PTFA181001E V4 R250 Infineon Technologies IC FET RF LDMOS 100W H-36248-2 We recommend that the device be used at a Tj of below 120°C.PTFA181001E V4 R250 Infineon Technologies IC FET RF LDMOS 100W H-36248-2
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information.PTFA181001E V4 R250 Infineon Technologies IC FET RF LDMOS 100W H-36248-2