1 pcs
Mininum order quantity from 1PCS PZU11B2,115
Mininum order value from 1USD
2 days
lead time of PZU11B2,115 is from 2 to 5 days
12 hours
Fast quotation of PZU11B2,115 within 12 hours
60 days
60 days full quality warranty of PZU11B2,115
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF PZU11B2,115 NXP Semiconductors (VA) DIODE ZENER 11V 310MW SOD323F
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.PZU11B2,115 NXP Semiconductors (VA) DIODE ZENER 11V 310MW SOD323F
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 PZU11B2,115 NXP Semiconductors (VA) DIODE ZENER 11V 310MW SOD323F
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFPZU11B2,115 NXP Semiconductors (VA) DIODE ZENER 11V 310MW SOD323F