1 pcs
Mininum order quantity from 1PCS MMBV2101LT1G
Mininum order value from 1USD
2 days
lead time of MMBV2101LT1G is from 2 to 5 days
12 hours
Fast quotation of MMBV2101LT1G within 12 hours
60 days
60 days full quality warranty of MMBV2101LT1G
1, we will give you new and original parts with factory sealed package
2, Quality warranted: All products have to be passed our Quality Control before delivery.
2,If you need more details of MMBV2101LT1G,like pictures ,package,datasheet and so on, pls email to [email protected]
Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF MMBV2101LT1G ON Semiconductor DIODE TUNING SS 30V SOT23
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.MMBV2101LT1G ON Semiconductor DIODE TUNING SS 30V SOT23
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 MMBV2101LT1G ON Semiconductor DIODE TUNING SS 30V SOT23
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFMMBV2101LT1G ON Semiconductor DIODE TUNING SS 30V SOT23