Micron launches the world's first 176-layer NAND mobile solution to help 5G ultra-fast experience

Advanced 3D NAND technology is applied to Micron's mobile storage products to create a rich and smooth multimedia experience for users

Micron Technology Inc. (Micron Technology Co., Ltd., Nasdaq: MU), a leading supplier of memory and storage solutions, announced today that the company has begun mass shipments of the world's first universal flash memory UFS 3.1 based on 176-layer NAND technology. Mobile solutions. This product is tailor-made for high-end flagship mobile phones. Compared with previous generation products, it can achieve up to 75% sequential write and random read performance improvement, thereby unlocking the potential of 5G-only 9.6 seconds to download a 2 hour 4K Movie.

The compact size of Micron's 176-layer NAND perfectly fits the large-capacity and small-volume requirements of mobile devices. Previously, Micron announced in June that it had shipped PCIe 4.0 solid-state drives equipped with 176-layer NAND, providing high-performance, low-power flexible design options for professional workstations and ultra-thin notebooks. Today, Micron has successfully applied the industry's leading cutting-edge NAND technology and performance to smart phones, bringing a faster mobile phone response experience and realizing true multitasking between applications.

Raj Talluri, senior vice president and general manager of Micron’s Mobile Products Division, said: “5G communication technology can increase the transmission rate of mobile devices to the level of several Gb, but this ultra-fast mobile experience must have a high-performance hardware foundation. Micron’s 176-layer NAND has achieved a technological breakthrough, providing smartphones with unparalleled performance, enabling consumers to experience rich multimedia content on the mobile terminal easily and quickly."

The mixed workload performance of Micron's 176-layer UFS 3.1 solution has increased by 15% compared with the previous generation product, which makes the phone start and switch applications faster, thereby creating a smoother mobile experience. Micron applied 176-layer NAND technology to UFS 3.1 to overcome storage bottlenecks and enable mobile phone users to enjoy 5G high-speed communications.

Fang Fei, President of the Product Line of Honor Terminal Co., Ltd. said: “Honor’s flagship Magic3 series will be the first to be equipped with the industry’s first 176-layer NAND technology UFS 3.1 launched by Micron. Use, high-speed download, storage and other scenes bring a fast and smooth use experience."

Micron's 176-layer mobile solution has the following advantages:

• Enhanced performance: Compared with the previous generation products, Micron's 176-layer UFS 3.1 solution has a 75% increase in sequential write speed and a 70% increase in random read speed, greatly improving application performance.

• Faster download speed: Sequential write speeds of up to 1,500 MB/sec means downloading a 10-minute 4K (2,160 pixel resolution) network video in 0.7 seconds, while downloading a 2-hour 4K movie 9.6 seconds.

• Smoother mobile experience: Compared with the previous generation products, the excellent performance of Micron's 176-layer UFS 3.1 solution reduces response latency by approximately 10%, ensuring a more reliable mobile experience.

• Longer device life: The total number of bytes that can be written by Micron's 176-layer mobile solution is twice that of the previous generation product, which means that it can store twice the total amount of data before without compromising the reliability of the device sex. Even heavy mobile phone users will find that the service life of smart phones has been greatly increased.

Micron's 176-layer UFS 3.1 mobile solution is available

The UFS 3.1 mobile solution based on Micron's 176-layer discrete NAND has now been publicly shipped, offering three capacities of 128GB, 256GB and 512GB.