SAN FRANCISCO—Flash memory vendor Spansion Inc. said Wednesday (May 23) it began sampling the
first single-level cell (SLC) NAND flash memory devices to emerge from a deal with South Korea's SK Hynix Inc.
announced last month. The devices, made by Hynix and tested and packaged by Spansion, are implemented in 4X-nm floating-gate technology and are aimed at data storage in automotive, consumer and networking applications,
Spansion (Sunnyvale, Calif.) said.
Spansion SLC NAND will be offered in densities from 1 Gb to 8 Gb in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support and stringent reliability demands, such as 1-bit error correction code, according to Spansion.
Spansion also unveiled its SLC NAND product roadmap through 2017. The company plans to continue producing the 4X-nm SLC devices through 2017. It plans to start sampling 3X-nm SLC NAND devices late this year and 2X-nm devices in 2014. All will be produced through 2017, according to the company's roadmap.
