LONDON – Intel Corp. (Santa Clara, Calif.) has announced the integration of a 3G HSPA radio frequency transceiver with power amplifiers on a single 65-nm die.
The company did not say where the chip is being manufactured.
The SMARTi UE2p integrates power management and sensors and allows direct connection to the battery. The chip supports multiple 3G dual-band configurations for use with Intel's HSPA modem chips.
"This will allow our customers to introduce lower-cost 3G handsets and support the transition of the machine-to-machine market segment toward 3G-based connected devices to help enable the Internet of things," said Stefan Wolff, vice president of the Intel Architecture Group, in a statement.
Intel said the SMARTi UE2p chip would be available as samples in the fourth quarter of 2012.
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