LONDON – Power transistor startup Transphorm Inc. (Goleta, Calif.) has produced gallium-nitride on silicon components with a breakdown voltage of 600-V.
The company had previously announced a range of GaN power diodes. The company has added more diodes and power transistors to its range. The breakdown voltage of 600-V means that the improved power efficiency of GaN can be applied to applications that operate direct from mains electricity.
Transphorm, founded in 2007, has demonstrated dc-dc boost converter power supply board with 99 percent efficiency and a three-phase motor drive board with 98.5 percent efficiency at the PCIM 2012 exhibition in Nuremburg, Germany. The company said the Tru-Sine motor drive provides between 2 and 8 percent higher efficiency at 100-kHz switching frequency compared with best IGBT-based motor drives at 15-kHz.
The company announced its first GaN-on-Si products – power transistors, diodes and modules at a lower breakdown voltage – in 2011.
The following 600-V breakdown products are available for sale as evaluation samples through the Transphorm website but only to "approved" customers:
The TPS30xxPK series GaN diode with 2, 4, and 6-amp current, in a TO-220 package
TPH3006PS 180 mohm GaN transistor in TO-220 package
TPT3044M three-phase GaN module and related inverter application board TDMD2000E0I
"In the motor segment alone, Transphorm's innovations create the potential to save 2.5 percent of U.S. electricity generation through enhanced electro-mechanical efficiency of the full drive and motor system – equivalent to the energy saving potential of replacing incandescent lighting with white LEDs," said Umesh Mishra, CEO of Transphorm, in a statement.
"Our team continues to expand its lead in high voltage GaN, with a broad portfolio of transistors, diodes and modules now possible on low cost silicon substrate platform," said Primit Parikh, president of Transphorm, in the same statement.
Transphorm entered the Silicon 60,
EE Times' list of emerging startup companies at version 12.5 in April 2011. The latest edition of the Silicon 60 is version 13.0 which can be found at
http://confidential.eetimes.com/analysis-reports/4371437/EE-Times-60-Emerging-Startups
Related links and articles: www.transphormusa.comNews articles:
GaN power market to rise to $10 million in 2012, says Yole
GaN startup raises $38 million to transform power conversionPlessey buys Cambridge spin-off for HB LEDs
Soitec, Sumitomo offer 'smart-cut' GaN wafers
Startup EpiGaN powers GaN on silicon wafers 
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