1 pcs
Mininum order quantity from 1PCS SPB08P06P G
Mininum order value from 1USD
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lead time of SPB08P06P G is from 2 to 5 days
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60 days
60 days full quality warranty of SPB08P06P G
1, we will give you new and original parts with factory sealed package
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF SPB08P06P G Infineon Technologies (VA) MOSFET P-CH 60V 8.8A TO-263
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.SPB08P06P G Infineon Technologies (VA) MOSFET P-CH 60V 8.8A TO-263
June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 SPB08P06P G Infineon Technologies (VA) MOSFET P-CH 60V 8.8A TO-263
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFSPB08P06P G Infineon Technologies (VA) MOSFET P-CH 60V 8.8A TO-263