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Part Number:   IPB097N08N3 G
Description:   MOSFET N-CH 80V 70A TO263-3
Category:   MOSFET Semiconductor
Manufacture:   Infineon Technologies
Package:   Discrete Semiconductor Products
Standard Package:   
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1 pcs
Mininum order quantity from 1PCS IPB097N08N3 G
Mininum order value from 1USD
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lead time of IPB097N08N3 G is from 2 to 5 days
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized  High speed switching  Fully isolated TO-3PF plastic package  Creepage distance path is 5.4 mm (typ.) for TO-3PF IPB097N08N3 G Infineon Technologies MOSFET N-CH 80V 70A TO263-3
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.IPB097N08N3 G Infineon Technologies MOSFET N-CH 80V 70A TO263-3

June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 IPB097N08N3 G Infineon Technologies MOSFET N-CH 80V 70A TO263-3
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFIPB097N08N3 G Infineon Technologies MOSFET N-CH 80V 70A TO263-3