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Part Number:   FDS3580
Description:   MOSFET N-CH 80V 7.6A 8SOIC
Category:   MOSFET Semiconductor
Manufacture:   Fairchild Semiconductor
Package:   Discrete Semiconductor Products
Standard Package:   
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1 pcs
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60 days
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Features
100% avalanche tested Intrinsic capacitances and Qg minimized  High speed switching  Fully isolated TO-3PF plastic package  Creepage distance path is 5.4 mm (typ.) for TO-3PF FDS3580 Fairchild Semiconductor MOSFET N-CH 80V 7.6A 8SOIC
Application :Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.The strengthened layout coupled with the company’s proprietary edge termination structure,gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.FDS3580 Fairchild Semiconductor MOSFET N-CH 80V 7.6A 8SOIC

June 2010 Doc ID 13102 Rev 9 1/15
15
STFW3N150
STP3N150, STW3N150 FDS3580 Fairchild Semiconductor MOSFET N-CH 80V 7.6A 8SOIC
N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET
in TO-220, TO-247, TO-3PFFDS3580 Fairchild Semiconductor MOSFET N-CH 80V 7.6A 8SOIC